According
to a new market report published by Transparency Market Research
(www.transparencymarketresearch.com) “IGBT and Super Junction
MOSFET Market - Global Industry Analysis, Size, Share, Growth, Trends
and Forecast, 2013 - 2019,” the combined global market for IGBT
(Insulated Gate Bipolar Transistor) and super junction MOSFET
(Metal-oxide Semiconductor Field Effect Transistor) was valued USD
4,776.2 million in 2012 and is expected to grow at a CAGR of 11.6%
during the forecast period 2013 – 2019. The market is estimated to
reach USD 10,100.0 million by 2019. Increasing focus on improving
energy efficiency in electrical and electronic product designs,
driven by regulatory pressure is expected to drive the growth of this
market over the coming years. In 2012, Asia Pacific was the largest
regional market for IGBT and super junction MOSFETs in terms of
revenue, accounting for around 39% share of the total global market.
Asia Pacific is also the fastest growing market for IGBT and super
junction MOSFETs with its proliferating electronics manufacturing
industry led by developments in China, South Korea and Taiwan.
Browse
the full report at
http://www.transparencymarketresearch.com/igbt-super-junction-mosfet.html
In
2012, IGBT modules held around 64% revenue share of the total market,
while the rest was held by discrete IGBTs. While growth of the IGBT
modules segment is driven by increasing demand from photovoltaic
inverters and electric and hybrid vehicles, discrete IGBTs are
experiencing increasing demand from the consumer electronics sector.
The industrial applications segment was the leading application area
for IGBT in 2012 in terms of revenue generation, followed by the
motor drives application segment. The electric and hybrid electric
vehicles (EV/HEV) application area for IGBT is anticipated to be the
fastest growing segment during the forecast period, growing at a CAGR
of 21.1%. The converters, chargers and adapters application area was
the leading segment for super junction MOSFETs in 2012, followed by
the others (servers, networking equipment, etc.) segment. Like IGBT,
the electric and hybrid electric vehicles (EV/HEV) application
segment for super junction MOSFETs is anticipated to be the fastest
growing application area, growing at a CAGR of 30% during the
forecast period 2013 – 2019.
Mitsubishi
Electric Corporation was the market leader for IGBT, followed by
Infineon Technologies AG, in 2012. For super junction MOSFETs,
Infineon Technologies AG was the market leader in 2012, in terms of
percentage share. The top two players accounted for more than 85%
share of the total market for super junction MOSFETs in 2012. Other
key players in the IGBT and super junction MOSFET market include
Fairchild Semiconductor International, Inc., STMicroelectronics N.V.,
ABB Ltd., Hitachi Power Semiconductor Device, Ltd., Toshiba
Corporation, Vishay Intertechnology, Inc., Fuji Electric Co. Ltd.,
and Semikron, Inc.
The
global IGBT and super junction MOSFET market is segmented as below:
IGBT
and Super Junction MOSFET Market, By Product Type
IGBT
Discrete
IGBT
IGBT
module
Super
junction MOSFET
Discrete
super junction MOSFET
Super
junction MOSFET module
IGBT
and Super Junction MOSFET Market, By Application
Residential
Uninterrupted
power supply (UPS)
Wind
turbines
Photovoltaic
(PV) inverter
Rail
traction
Consumer
applications
Electric
vehicles/hybrid electric vehicles (EV/HEV)
Motor
drives
Industrial
applications
Converters,
adapters and chargers
Lighting
Others
(servers, telecom and networking devices, etc.)
IGBT
and Super Junction MOSFET Market, By Geography
North
America
Europe
Asia
Pacific
Rest of
the World (RoW)
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