According
to a new market report published by Transparency Market Research “GaN
Industrial Devices Market - Global Industry Analysis, Size, Share,
Growth, Trends and Forecast 2015 - 2021,” the market was valued at
USD 481.8 million in 2014, which is expected to reach USD 1,315.0
million by 2021, growing at a CAGR of 15.1% from 2015 to 2021. By
volume, global GaN Industrial Devices market is expected to grow at a
CAGR of 17.5% during the forecast period from 2015 to 2021 to reach a
market size of 3,427.2 million units by 2021. In 2014, volume of the
market was 1,099.6 million units.
Browse
the full GaN Industrial Devices Market - Global Industry Analysis,
Size, Share, Growth, Trends and Forecast 2015 – 2021 report at
http://www.transparencymarketresearch.com/gan-industrial-devices-market.html
Gallium
nitride (GaN), a wide band gap semiconductor material, is a new
technology and offer enhanced performance characteristics compared to
other semiconductor devices such as Silicon (Si) and Gallium arsenide
(GaAs). Due to high temperature resistivity, low power consumption,
high breakdown voltage, better thermal stability and high electron
mobility among others, GaN industrial devices are widely acknowledged
by different industrial sectors as a green technology. GaN is
expected to be the next generation power semiconductor and thus
various countries are continuously indulged in widespread
applications of GaN industrial devices. These devices are
significantly used in automotive, defense, information and
communication technology, military, aerospace and power distribution
systems among others.
Moreover,
GaN is broadly implemented in radio frequency devices, light-emitting
diodes (LEDs) and power electronics, due to its ability to operate at
high frequency and high temperature. Therefore, increasing
applications of GaN based devices is primarily fuelling the expansion
of the market. In addition, rapid advancement in GaN technology along
with large scale of production is further driving the growth of the
market for GaN industrial devices. Overall, these factors are
analyzed to generate a positive impact on the growth of GaN
industrial devices market during the forecast period from 2015 to
2021.
By
application, the global GaN HEMT market is divided into seven
segments, namely WiMAX/LTE, wireless phone infrastructure: base
stations (BTS), CATV, V-SAT, satellite, defense and others. By
revenue, wireless phone infrastructure: base stations (BTS) segment
was the largest contributor to the market in 2014, accounting for a
market share of 26.0%. Rising adoption of GaN HEMT technology is
leading to an increase in the number of base transceiver station
installations.
The
global GaN industrial devices market by types is divided into two
segments: power devices and opto electronics. By revenue, opto
electronics was the largest contributor to the market in 2014,
accounting for 78.0% of the overall market. The wide implementation
of these devices in light emitting diodes and laser diodes is majorly
driving the market.
gan-industrial-devices-market
By
application, the global GaN industrial devices market can be
classified into three sub-segments: radio frequency (RF), light
emitting diodes (LEDs) and power devices. LED segment was the largest
contributor to the market, both in terms of value and volume in 2014,
accounting for a market share of 68.0% and 82.5% respectively This is
due to the extensive usage of GaN based LED devices in traffic signal
lamps, vehicle lamps and liquid crystal displays among others.
Moreover, there have been two major developments of GaN based LED
technology, such as development of GaN based devices on foreign
substrates and invention of bulk GaN substrate based LEDs.
The
global GaN industrial devices market has been bifurcated into four
broad regions: North America, Europe, Asia Pacific and RoW. In terms
of value, North America acquired the largest share in 2014,
accounting for 31.1% of the global market. This is mainly due to high
penetration of GaN based transistors in military and defense
applications. The penetration of GaN industrial devices is fueled by
increasing demand for LEDs in computers, laptops, mobile tablets,
gaming devices and televisions. Europe held the second largest market
share and accounted for 28.9% in the global market in 2014 in terms
of revenue.
Some
of the leading players in the GaN industrial devices market are
Fujitsu Limited (Tokyo, Japan), GaN Systems Inc.(Ottawa, Canada),
Freescale Semiconductor Inc. (Texas, US), Efficient Power Conversion
Corporation (California, US), International Rectifier (California,
USA), NXP Semiconductors N.V. (Neitherlands), Renesas Electronics
Corporation (Tokyo, Japan), Toshiba Corporation (Tokyo, Japan), Texas
Instruments Inc. (Texas, US), International Quantum Epitaxy plc (UK),
Nichia Corporation (Tokushima, Japan), Cree Inc. (North Carolina, US)
and RF Micro Devices Inc. (North Carolina, US) among others.
The
report provides detailed analysis of the global GaN industrial
devices market along with the estimates, in terms of revenue (USD
Million) and volume (Million Units) for the forecast period from 2015
to 2021. Moreover, the GaN industrial devices market has been
segmented on the basis of types and applications. Furthermore, GaN
HEMT market has been bifurcated on the basis of applications. Cross
sectional analysis of the global GaN industrial devices market into
four major geographical segments have also been covered under the
scope of the report.
The
global GaN industrial devices market has been segmented into:
GaN
industrial devices market, by Types:
Power
devices
Schottky
diode
Metal
oxide semiconductor field effect transistor (MOSFETs)
High
electron mobility transistors (HEMTs)
Others
(rectifiers, other advanced transistor types)
Opto
electronics
Light-emitting
diodes
Laser
diodes
GaN
industrial devices market, by Application
Radio
frequency (RF)
Light-emitting
diodes (LED)
Power
device
GaN
industrial devices market, by geography: The market is broadly
segmented on the basis of geography into:
North
America
United
States
Canada
Others)
Europe
Germany
United
Kingdom
Italy
France
Rest
of Europe
Asia
Pacific
APEJ
China
India
Rest
of APEJ
Japan
Middle
East and Africa (MEA)
Saudi
Arabia
South
Africa
Others
Latin
America
Brazil
Others
GaN
HEMT market, by Application
WiMAX/LTE
market
Wireless
phone infrastructure: Base stations (BTS) market
CATV
market
V-SAT
market
Satellite
market
Defense
market
Others
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Us
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material for business reports.
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